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MIC4102 Datasheet(PDF) 3 Page - Micrel Semiconductor |
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MIC4102 Datasheet(HTML) 3 Page - Micrel Semiconductor |
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3 / 17 page ![]() Micrel, Inc. MIC4102 November 2006 3 M9999-112806 Absolute Maximum Ratings (1) Supply Voltage (VDD, VHB – VHS) ...................... -0.3V to 18V Input Voltages (VPWM, VLS) ..................... -0.3V to VDD + 0.3V Voltage on LO (VLO) .............................. -0.3V to VDD + 0.3V Voltage on HO (VHO) ......................VHS - 0.3V to VHB + 0.3V Voltage on HS (continuous) .............................. -1V to 110V Voltage on HB ..............................................................118V Average Current in VDD to HB Diode.......................100mA Junction Temperature (TJ) ........................–55°C to +150°C Storage Temperature (Ts) ..........................-60°C to +150°C EDS Rating (3)..............................................................Note 3 Operating Ratings (2) Supply Voltage (VDD)........................................ +9V to +16V Voltage on HS ................................................... -1V to 100V Voltage on HS (repetitive transient) .................. -5V to 105V HS Slew Rate............................................................ 50V/ns Voltage on HB ...................................VHS + 8V to VHS + 16V and............................................ VDD - 1V to VDD + 100V Junction Temperature (TJ) ........................–40°C to +125°C Junction Thermal Resistance SOIC-8L ( θJA)...................................................140°C/W Electrical Characteristics (4) VDD = VHB = 12V; VSS = VHS = 0V; No load on LO or HO; TA = 25°C; unless noted. Bold values indicate –40°C< TJ < +125°C. Symbol Parameter Condition Min Typ Max Units Supply Current IDD VDD Quiescent Current PWM = 0V 150 450 600 µA IDDO VDD Operating Current f = 500kHz 3 3.5 4.0 mA IHB Total HB Quiescent Current PWM = 0V 25 150 200 µA IHBO Total HB Operating Current f = 500kHz 1.5 2.5 3 mA IHBS HB to VSS Current, Quiescent VHS = VHB = 110V 0.05 1 30 µA Input Pins (TTL) VIL Low Level Input Voltage Threshold 0.8 1.5 V VIH High Level Input Voltage Threshold 1.5 2.2 V RI Input Pull-down Resistance 100 200 500 kΩ Under Voltage Protection VDDR VDD Rising Threshold 6.5 7.3 8.0 V VDDH VDD Threshold Hysteresis 0.5 V VHBR HB Rising Threshold 6.0 7.0 8.0 V VHBH HB Threshold Hysteresis 0.4 V Boost Strap Diode VDL Low-Current Forward Voltage IVDD-HB = 100µA 0.4 0.55 0.70 V VDH Low-Current Forward Voltage IVDD-HB = 100mA 0.7 0.8 1.0 V RD Dynamic Resistance IVDD-HB = 100mA 1.0 1.5 2.0 Ω |
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