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STB19NB20 Datasheet(PDF) 1 Page - STMicroelectronics |
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STB19NB20 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STB19NB20 N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.150 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performance. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® June 1998 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 200 V VDGR Drain- gate Voltage (RGS =20 k Ω)200 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC19 A ID Drain Current (continuous) at Tc = 100 oC12 A IDM( •) Drain Current (pulsed) 76 A Ptot T otal Dissipation at Tc =25 oC125 W Derating Factor 1 W / oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage T emperature -65 to 150 oC Tj Max. O perat ing Junct ion T emperature 150 oC ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 19A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX 1 3 D 2PAK TO-263 (suffix ”T4”) TYPE VDSS RDS(on) ID ST B19NB20 200 V < 0.180 Ω 19 A 1/8 |
Similar Part No. - STB19NB20 |
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Similar Description - STB19NB20 |
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