RT1P144M datasheet(2/3 Pages) ISAHAYA

2 / 3 page

〈Transistor〉

ＲＴ１Ｐ１４４Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

MAXIMUM RATING (Ta=25℃)

RATING

SYMBOL

PARAMETER

RT1P144U

RT1P144M

RT1P144C

RT1P144S

UNIT

Ｖ

ＣＢＯ

Collector to Base voltage

-50

Ｖ

ＥＢＯ

Emitter to Base voltage

-6

Ｖ

ＣＥＯ

Collector to Emitter voltage

-50

Ｉ

Ｃ

Collector current

-100

Ｉ

ＣＭ

Peak Collector current

-200

Ｐ

Ｃ

Collector dissipation(Ta=25℃)

150

200

450

Ｔｊ

Junction temperature

+150

℃

Ｔｓｔｇ

Storage temperature

-55∼+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25 ℃)

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Ｖ

（ＢＲ）ＣＥＯ

C to E break down voltage

C=-100μA，RBE=∞

-50

Ｉ

ＣＢＯ

Collector cut off current

CB=-50V，I E =0

-0.1

μA

ｈ

ＦＥ

DC forward current gain

CE=-5V，I C =-5mA

−

Ｖ

ＣＥ（ｓａｔ）

C to E saturation voltage

C =-10mA，I B =-0.5mA

-0.1

-0.3

Ｖ

Ｉ

（ＯＮ）

Input on voltage

CE=-0.2V，I C =-5mA

-1.2

-1.8

Ｖ

Ｉ

（ＯＦＦ）

Input off voltage

CE=-5V，I C =-100μA

-0.4

-0.7

Ｒ

１

Input resistance

kΩ

Ｒ

２／Ｒ１

Resistance ratio

4.2

4.7

5.1

ｆ

Ｔ

Gain band width product

CE=-6V，I E =10mA

150

MHz

TYPICAL CHARACTERISTICS

DC forward current gain-Collector Current

100

1000

-1

-10

-100

Collector Current Ｉ

Ｃ(ｍＡ)

Input On Voltage - Collector Current

-0.1

-1

-10

-1

-10

-100

Collector Current Ｉ

Ｃ（ｍＡ）

Collector Current - Input Off Voltage

-10

-100

-1000

-0

-0.4

-0.8

-1.2

-1.6

-2

Input Off Voltage ＶＩ

（ＯＦＦ）（Ｖ）

ISAHAYA ELECTRONICS CORPORATION

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