RT1P140M datasheet(2/3 Pages) ISAHAYA

2 / 3 page

ＲＴ１P１４０Ｘ SERIES

Transistor With Resistor

For Switching Application

Silicon PNP Epitaxial Type

MAXIMUM RATING (Ta=25℃)

RATING

SYMBOL

PARAMETER

RT1P140T

RT1P140U

RT1P140M

RT1P140C

RT1P140S

UNIT

Ｖ

ＣＢＯ

Collector to Base voltage

-50

Ｖ

ＥＢＯ

Emitter to Base voltage

-6

Ｖ

ＣＥＯ

Collector to Emitter voltage

-50

Ｉ

Ｃ

Collector current

-100

Ｉ

ＣＭ

Peak Collector current

-200

Ｐ

Ｃ

Collector dissipation(Ta=25℃)

125（※） 150 200 450

Ｔｊ

Junction temperature

+125

+150

℃

Ｔｓｔｇ

Storage temperature

-55～+125

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃)

（※ ） package mounted on 9mm×19mm×1mm glass-epoxy substrate.

LIMIT

SYMBOL

PARAMETER

TEST CONDITION

MIN

TYP

MAX

UNIT

Ｖ

（ＢＲ）ＣＥＯ

C to E break down voltage

C=-100μA，RBE=∞

-50

Ｉ

ＣＢＯ

Collector cut off current

CB=-50V，I E =0

-0.1

μA

ｈ

ＦＥ

DC forward current gain

CE=-5V，I C =-1mA

100

－

Ｖ

ＣＥ（ｓａｔ）

C to E saturation voltage

C =-10mA，I B =-0.5mA

-0.3

Ｒ

１

Input resistance

kΩ

ｆ

Ｔ

Gain band width product

CE=-6V，I E =10mA

150

MHz

ISAHAYA ELECTRONICS CORPORATION

Collector voltage - Input off voltage

-10

-100

-1000

-0

-0.2

-0.4

-0.6

-0.8

-1

-1.2

-1.4

-1.6

-1.8

-2

Input off voltage　VI(OFF) (V)

VCE=-5V

Input on voltage - Collectorcurrent

-0.1

-1

-10

-0.1

-1

-10

-100

Collector current　Ic (mA)

VCE=-0.2V

DC forward current gain - Collector current

100

1000

-0.1

-1

-10

-100

Collector current　Ic(mA)

VCE=-5V

TYPICAL CHARACTERISTICS

RT1P140M Datasheet(PDF) 2 Page - Isahaya Electronics Corporation

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