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SFS4410 Datasheet(PDF) 1 Page - SemiWell Semiconductor |
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SFS4410 Datasheet(HTML) 1 Page - SemiWell Semiconductor |
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1 / 6 page ![]() Absolute Maximum Ratings Symbol Parameter Value Units VDSS Drain to Source Voltage 30 V ID Continuous Drain Current(@TA = 25°C) 10 A IDM Drain Current Pulsed (Note 1) 50 A VGS Gate to Source Voltage ±20 V PD Total Power Dissipation Single Operation (TA=25°C) 2.5 W Total Power Dissipation Single Operation (TA=70°C) 1.6 W TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJA Thermal Resistance, Junction-to-Ambient (Note 4) -- 50 °C/W SFS4410 January, 2003. Rev. 0. 1/6 Features ■ RDS(on) (Max 0.0135Ω )@VGS=10V RDS(on) (Max 0.020Ω )@VGS=4.5V ■ Gate Charge (Typical 33nC) ■ Maximum Junction Temperature Range (150°C) ■ Available in Tape and Reel General Description This Power MOSFET is produced using Semiwell’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a low gate charge with superior switching performance, and rugged avalanche characteristics.This Power MOSFET is well suited for power management circuit or DC-DC converter. SemiWell Semiconductor Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Logic N-Channel MOSFET 8-SOIC Symbol S G D 1 2 3 4 5 6 7 8 D D D S S D D D D S S G S PRELIMINARY |
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