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STB45N10L Datasheet(PDF) 2 Page - STMicroelectronics |
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STB45N10L Datasheet(HTML) 2 Page - STMicroelectronics |
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2 / 6 page ![]() THERMAL DATA Rthj-case Rthj-amb Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) 45 A EAS Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 25 V) 400 mJ EAR Repetitive Avalanche Energy (pulse width limited by Tj max, δ < 1%) 100 mJ IAR Avalanche Current, Repetitive or Not-Repetitive (Tc = 100 oC, pulse width limited by Tj max, δ < 1%) 32 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA VGS = 0 100 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating VDS = Max Rating x 0.8 Tc = 125 o C 250 1000 µA µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 15 V ±100 nA ON ( ∗) Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS ID = 250 µA 1 1.7 2.5 V RDS(on) Static Drain-source On Resistance VGS = 5 V ID = 22.5 A VGS = 5 V ID = 22.5 A Tc = 100 oC VGS = 10 V ID = 22.5 A VGS = 10 V ID = 22.5 A Tc = 100 oC 0.028 0.024 0.036 0.072 0.032 0.064 Ω Ω Ω Ω ID(on) On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V 45 A DYNAMIC Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs ( ∗) Forward Transconductance VDS > ID(on) x RDS(on)max ID = 22.5 A 20 43 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V f = 1 MHz VGS = 0 3700 600 170 4700 800 230 pF pF pF STB45N10L 2/6 |
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