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RT3NDDM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation

Part # RT3NDDM
Description  Composite Transistor With Resistor
PDF  3 Pages
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Manufacturer  ISAHAYA [Isahaya Electronics Corporation]
Direct Link  http://www.idc-com.co.jp
Logo ISAHAYA - Isahaya Electronics Corporation

RT3NDDM Datasheet(HTML) 1 Page - Isahaya Electronics Corporation

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DESCRIPTION
RT3NDDM is a composite transistor built with two
RT1N237 chips in SC-88 package.
FEATURE
Silicon NPN epitaxial type
Built in bias resistor (R1=2.2kΩ，R2=47kΩ)
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
Unit：mm
MAXIMUM RATING (Ta=25℃)
SYMBOL
PARAMETER
RATING
UNIT
VCBO
Collector to Base voltage
50
V
VEBO
Emitter to Base voltage
10
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation（Total, Ta=25℃）
150
mW
Tj
Junction temperature
＋
150
℃
Tstg
Storage temperature
-55∼＋150
℃
MARKING
D
N D
.
① ② ③
⑥ ⑤ ④
ISAHAYA ELECTRONICS CORPORATION
TERMINAL
CONNECTOR
①：
EMITTER1
②：
BASE1
③：
COLLECTOR2
④：
EMITTER2
⑤：
BASE2
⑥
:COLLECTOR1
JEITA：SC-88
1.25
2.1
①
②
③
⑤
④
⑥
RTr2
RTr1
R1
R1
R2
R2
①
②
③
④
⑤
⑥


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