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STB45NF06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STB45NF06 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() 3/6 STB45NF06 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 30V, ID = 19A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 20 ns tr Rise Time 100 ns Qg Total Gate Charge VDD = 48V, ID = 38A, VGS = 10V 43 58 nC Qgs Gate-Source Charge 9 nC Qgd Gate-Drain Charge 15 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) Turn-off-Delay Time VDD = 30V, ID = 19A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 50 ns tf Fall Time 20 ns td(off) Off-voltage Rise Time Vclamp =48V, ID =38A RG =4.7Ω, VGS = 10V 45 ns tf Fall Time (see test circuit, Figure 5) 42 ns tc Cross-over Time 60 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 38 A ISDM (1) Source-drain Current (pulsed) 152 A VSD (2) Forward On Voltage ISD = 38A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 95 ns Qrr Reverse Recovery Charge 260 nC IRRM Reverse Recovery Current 5.5 A |
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