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RT3TAAM Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3TAAM Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page ![]() ELECTRICAL CHARACTERISTICS (Ta=25℃) Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ 50 - - V ICBO Collector cut off current VCB =50V,IE=0 - - 0.1 μ A hFE DC forward current gain VCE=5V,IC=5mA 82 - - - VCE(sat) Collector to Emitter saturation voltage IC=5mA,IB=0.25mA - 0.1 0.3 V VI(ON) Input on voltage VCE=0.2V,IC=5mA - 2.4 8.8 V VI(OFF) Input off voltage VCE=5V,IC=100μA 0.8 1.1 - V R1 Input resistor - 70 100 130 kΩ R2/R1 Resistor ratio - 0.8 1.0 1.2 - fT Gain band width product VCE=6V,IE=10mA - - 200 150 - - MHZ TYPICAL CHARACTERISTICS ( Tr1 ) PRELIMINARY RT3TAAM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION COLLECTOR CURRENT VS.INPUT OFF VOLTAGE 10 100 1000 0 0.4 0.8 1.2 1.6 2 INPUTOFF VOLTAGE VI(OFF)(V) VCE=5V INPUT ON VOLTAGE VS.COLLECTOR CURRENT 0.1 1 10 1 10 100 COLLECTOR CURRENT I C(mA) VCE=0.2V DC FORWARD CURRENT GAIN VS.COLLECTOR CURRENT 10 100 1000 1 10 100 COLLECTOR CURRENT IC(mA) VCE=5V Tr1 Tr2 |
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