STB4NC50 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	STB4NC50

Description	N-CHANNEL 500V - 2.2Ω - 4A D2PAK PowerMesh™ II MOSFET

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2000

STB4NC50

N-CHANNEL 500V - 2.2

Ω - 4A D2PAK

PowerMesh™II MOSFET

s

TYPICAL RDS(on) = 2.2 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

NEW HIGH VOLTAGE BENCHMARK

s

GATE CHARGE MINIMIZED

DESCRIPTION

The PowerMESH

™II is the evolution of the first

generation of MESH OVERLAY

™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVERS

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

(1)ISD ≤4A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

TYPE

VDSS

RDS(on)

ID

STB4NC50

500V

< 2.7

Ω

4 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

500

V

VGS

Gate- source Voltage

±30

V

ID

Drain Current (continuos) at TC = 25°C

4A

ID

Drain Current (continuos) at TC = 100°C

2.5

A

IDM (q)

Drain Current (pulsed)

12

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.64

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

1

3

D²PAK

INTERNAL SCHEMATIC DIAGRAM

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