STB5NA80 datasheet(2/10 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead T emperature For Soldering Purpose

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current , Repet itive or Not -Repetitive

(pulse widt h limited by Tj max,

δ <1%)

4.7

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, I

D =IAR,VDD =25 V )

110

EAR

Repetit ive Avalanche Energy

(pulse widt h limited by Tj max,

δ <1%)

4.5

IAR

Avalanche Current , Repet itive or Not -Repetitive

(Tc =100

oC, pulse width limited by Tj max, δ <1%)

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID = 250

µAVGS = 0

800

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

VDS =Max Rating x0.8

Tc = 125

250

1000

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 30 V

±100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID =250

µA2.5

3.75

RDS( on)

St atic Drain-source On

Resistance

VGS =10 V

ID =2. 5 A

VGS =10 V

ID =2.5 A Tc = 100

1.8

2.4

4.8

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on)max VGS =10 V

4. 7

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on) max

ID =2.5 A

2. 7

5.2

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

1250

140

1700

190

STB5NA80

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