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9N90 Datasheet(PDF) 2 Page - Unisonic Technologies

Part # 9N90
Description  Power MOSFET
PDF  8 Pages
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Manufacturer  UTC [Unisonic Technologies]
Direct Link  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

9N90 Datasheet(HTML) 2 Page - Unisonic Technologies

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9N90
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 8
www.unisonic.com.tw
QW-R502-217.A
ABSOLUTE MAXIMUM RATING (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
900
V
Gate-Source Voltage
VGSS
±30
V
Continuous Drain Current (TC = 25℃)
ID
9.0
A
Pulsed Drain Current (Note 1)
IDM
36
A
Avalanche Current (Note 1)
IAR
9.0
A
Single Pulsed(Note 2)
EAS
900
Avalanche Energy
Repetitive(Note 1)
EAR
28
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
4.0
V/ns
280
W
Power Dissipation
Derate above 25℃
PD
2.22
W/℃
Junction Temperature
TJ
125
℃
Operating Temperature
TOPR
-20 ~ +85
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Junction-to- Ambient
θJA
40
℃
/W
Junction-to-Case
θJC
0.45
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
900
V
Drain-Source Leakage Current
IDSS
VDS = 900 V, VGS = 0 V
10
μA
Forward
IGSSF
VGS = 30 V, VDS = 0 V
100
Gate-Body Leakage Current
Reverse
IGSSR
VGS = -30 V, VDS = 0 V
-100
nA
Breakdown Voltage Temperature
Coefficient
BV
△
DSS/△TJ
ID = 250 μA, Referenced to 25℃
0.99
V/℃
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250 μA
3.0
5.0
V
Static Drain-Source On-Resistance
RDS(ON)
VGS = 10 V, ID = 4.5 A
1.12
1.4
Ω
DYNAMIC PARAMETERS
Input Capacitance
CISS
2100 2730
pF
Output Capacitance
COSS
175
230
pF
Reverse Transfer Capacitance
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
14
18
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
50
110
ns
Turn-On Rise Time
tR
120
250
ns
Turn-Off Delay Time
tD(OFF)
100
210
ns
Turn-Off Fall Time
tF
VDD = 4500V, ID =11.0 A,
RG = 25Ω (Note 4, 5)
75
160
ns
Total Gate Charge
QG
45
58
nC
Gate-Source Charge
QGS
13
nC
Gate-Drain Charge
QGD
VDS = 720V, ID = 11.0A,
VGS = 10 V (Note 4, 5)
18
nC



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