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STB8NC50 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STB8NC50
Description  N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh™ I MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB8NC50 Datasheet(HTML) 1 Page - STMicroelectronics

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November 2001
STB8NC50
N-CHANNEL 500V - 0.7
Ω - 8A D2PAK
PowerMesh™II MOSFET
s
TYPICAL RDS(on) = 0.7Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
NEW HIGH VOLTAGE BENCHMARK
s
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is the evolution of the first
generation of MESH OVERLAY
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
(1)ISD ≤8A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
TYPE
VDSS
RDS(on)
ID
STB8NC50
500V
< 0.85
8 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
500
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
500
V
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuos) at TC = 25°C
8A
ID
Drain Current (continuos) at TC = 100°C
5.4
A
IDM (q)
Drain Current (pulsed)
32
A
PTOT
Total Dissipation at TC = 25°C
135
W
Derating Factor
1
W/°C
dv/dt(1)
Peak Diode Recovery voltage slope
3
V/ns
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
1
3
D2PAK
INTERNAL SCHEMATIC DIAGRAM


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