STB8NS25 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STB8NS25

Description	N-CHANNEL 250V - 0.38ohm - 8A D2PAK MESH OVERLAY™ MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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July 2001

STB8NS25

N-CHANNEL 250V - 0.38

Ω - 8A D2PAK

MESH OVERLAY™ MOSFET

(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX

(*)Limited only by maximum temperature allowed

INTERNAL SCHEMATIC DIAGRAM

s

TYPICAL RDS(on) = 0.38 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STB8NS25

250 V

< 0.45

Ω

8 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

250

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

250

V

VGS

Gate- source Voltage

± 20

V

ID (*)

Drain Current (continuos) at TC = 25°C

8A

ID

Drain Current (continuos) at TC = 100°C

5A

IDM (q)

Drain Current (pulsed)

32

A

PTOT

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.64

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

–65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

D2PAK

1

3

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