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2STN2540 Datasheet(PDF) 3 Page - STMicroelectronics |
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2STN2540 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 2STN2540 Electrical characteristics 3/9 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICBO Collector cut-off current (IE =0) VCB = -30 V -0.1 µA IEBO Emitter cut-off current (IC =0) VEB = -5 V -0.1 µA VCE(sat) (1) 1. Pulsed duration = 300 µs, duty cycle ≤1.5% Collector-emitter saturation voltage IC = -0.5 A IB = -5 mA IC = -1 A IB = -10 mA IC = -2 A IB = -200 mA IC = -5 A IB = -500 mA -80 -120 -140 -350 -120 -180 -200 -450 mV mV mV mV VBE(sat) (1) Base-emitter saturation voltage IC = -5 A IB = -500 mA -1.3 V VBE(on) (1) Base-emitter on voltage VCE = -2 V IC = -2 A -1.25 V hFE (1) DC current gain IC = -0.5 A VCE = -2 V IC = -1 A VCE = -2 V IC = -2 A VCE = -2 V IC = -5 A VCE = -2 V 250 200 150 50 CCBO Collector-base capacitance IE = 0 VCB = -10 V f = 1 MHz 80 pF ton ts tf Resistive load Turn-on time Storage time Fall time IC = -1 A _ VCC = -10 V -IB1 = IB2 = -0.1 A Tp = 30 µs 75 426 62 ns ns ns |
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