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STGD10NC60H Datasheet(PDF) 1 Page - STMicroelectronics |
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STGD10NC60H Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() April 2007 Rev 1 1/14 14 ■ Low on-voltage drop (Vcesat) ■ Low CRES / CIES ratio (no cross-conduction susceptibility) Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) manta in ing a low voltage drop. Applications ■ High frequency motor controls ■ SMPS and PFC in both hard switch and resonant topologies ■ Motor drivers Internal schematic diagram Features Type VCES VCE(sat) (Max)@ 25°C IC @100°C STGD10NC60H 600V < 2.5V 10A 1 3 DPAK STGD10NC60H N-channel 10A - 600V - DPAK Very fast PowerMESH™ IGBT www.st.com Order code Part number Marking Package Packaging STGD10NC60H GD10NC60H DPAK Tape & reel |
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