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STD12NE06L Datasheet(PDF) 1 Page - STMicroelectronics |
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STD12NE06L Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STD12NE06L N - CHANNEL 60V - 0.09 Ω - 12A TO-251/TO-252 STripFET ™ POWER MOSFET s TYPICAL RDS(on) = 0.09 Ω s EXCEPTIONAL dv/dt CAPABILITY s AVALANCHE RUGGED TECHNOLOGY s 100 % AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION s ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.) s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION ® INTERNAL SCHEMATIC DIAGRAM January 2000 TYPE VDSS RDS(on) ID STD12NE06L 60 V < 0.12 Ω 12 A ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Unit VDS Drain-source Volt age (VGS =0) 60 V VDGR Drain- gate Voltage (RGS =20 k Ω)60 V VGS Gat e-source Voltage ± 20 V ID Drain Current (continuous) at Tc =25 oC12 A ID Drain Current (continuous) at Tc =100 oC8 A IDM( •) Drain Current (pulsed) 48 A Ptot Tot al Dissipation at Tc =25 oC35 W Derating F act or 0.23 W / oC dv/ dt(1 ) Peak Diode Recovery voltage slope 6 V/ns Tstg Storage T emperature -65 to 175 oC Tj Max. Operating Junction Temperature 175 oC ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 12 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX 3 2 1 IPAK TO-251 (Suffix ”-1”) 1 3 DPAK TO-252 (Suffix ”T4”) 1/9 |
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