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STD16NE06 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD16NE06
Description  N - CHANNEL 60V - 0.07ohm - 16A DPAK/IPAK STripFET POWER MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD16NE06 Datasheet(HTML) 1 Page - STMicroelectronics

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STD16NE06
N - CHANNEL 60V - 0.07
Ω - 16A DPAK/IPAK
STripFET
™ POWER MOSFET
s
TYPICAL RDS(on) = 0.07
Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
s
THROUG-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
s
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”STripFET
™” strip-ba-
sed process.The resulting transistor shows extre-
mely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignment steps therefore a remarkable manufac-
turing reproducibility.
APPLICATIONS
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
®
INTERNAL SCHEMATIC DIAGRAM
February 2000
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Un it
VDS
Drain-source Voltage (VGS =0)
60
V
VDGR
Drain- gate Voltage (RGS =20 k
Ω)60
V
VGS
G ate-source Volt age
± 20
V
ID
Drain Current (continuous) at Tc =25
oC16
A
ID
Drain Current (continuous) at Tc =100
oC11
A
IDM (
•)
Drain Current (pulsed)
64
A
Ptot
T otal Dissipat ion at Tc =25
oC40
W
Derating Factor
0.26
W /
o C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
-65 to 175
o C
Tj
Max. Operating Junction Temperature
175
o C
(
•) Pulse width limited by safe operating area
( 1)ISD
≤ 16 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX
TYPE
VDSS
RDS(on)
ID
STD16NE06
60 V
< 0.085
Ω
16 A
1/9


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