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STD17N06 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD17N06 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  STD17N05 STD17N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.06 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION s THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) s SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM December 1996 TYPE VDSS R DS(on) ID STD17N05 50 V < 0.085 Ω 17 A STD17N06 60 V < 0.085 Ω 17 A ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit STD17N05 STD17N06 VDS Drain-source Voltage (VGS =0) 50 60 V VDG R Drain- gate Voltage (RGS =20 k Ω)50 60 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at T c =25 oC17 A ID Drain Current (cont inuous) at T c =100 oC12 A IDM( •) Drain Current (pulsed) 68 A Ptot Total Dissipation at Tc =25 oC55 W Derating Factor 0.37 W/ oC Tstg St orage Temperat ure -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area 1 3 2 IPAK TO-251 (Suffix ”-1”) 1 3 DPAK TO-252 (Suffix ”T4”) 1/10 |
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