STD1NB80- datasheet(1/5 Pages) STMICROELECTRONICS

Part #	STD1NB80-

Description	N - CHANNEL 800V - 16ohm - 1A - IPAK PowerMESH MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STD1NB80-1

N - CHANNEL 800V - 16

Ω - 1A - IPAK

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 16

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

AC ADAPTORS AND BATTERY CHARGERS

FOR HANDHELD EQUIPMENT

INTERNAL SCHEMATIC DIAGRAM

September 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

800

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC1

A

ID

Drain Current (continuous) at Tc = 100

oC

0.63

A

IDM(

•)

Drain Current (pulsed)

4

A

Ptot

Total Dissipation at Tc = 25

o C50

W

Derating Factor

0.4

W/

o C

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tstg

Storage Temperature

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

(1) ISD

≤ 1Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

STD1NB80-1

800 V

< 20

Ω

1 A

3

2

1

IPAK

TO-251

(Suffix "-1")

1/5

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STMicroelectronics	STD1NB80-1	56Kb / 5P	N - CHANNEL 800V - 16W - 1A - IPAK PowerMESH MOSFET September 1998

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	STD1NB80	66Kb / 6P	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET
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