STD25NE03L datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STD25NE03L

Description	N - CHANNEL 30V - 0.019 ohm - 25A - TO-251/TO-252 STripFET POWER MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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STD25NE03L

N - CHANNEL 30V - 0.019

Ω - 25A - TO-251/TO-252

STripFET

™ POWER MOSFET

s

TYPICAL RDS(on) = 0.019

Ω

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics

unique

”Single

Feature

Size

™” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

s

AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

March 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Volt age (VGS =0)

30

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)30

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC20**

A

ID

Drain Current (continuous) at Tc =100

oC18**

A

IDM(

•)

Drain Current (pulsed)

100

A

Ptot

Tot al Dissipation at Tc =25

oC45

W

Derating F act or

0.3

W /

oC

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(**) Value limited only by the package

TYPE

VDSS

RDS(o n)

ID

STD25NE03L

30 V

< 0.025

Ω

25 A

3

2

1

IPAK

TO-251

(Suffix ”-1”)

1

3

DPAK

TO-252

(Suffix ”T4”)

1/9

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