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STD2NC50-1 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STD2NC50-1
Description  N-CHANNEL 500V - 3ohm - 2.2A DPAK/IPAK PowerMesh™ II MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD2NC50-1 Datasheet(HTML) 3 Page - STMicroelectronics

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STD2NC50 / STD2NC50-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 1.4 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
10
10
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 400V, ID = 2.8 A,
VGS = 10V
10
2.5
4.5
13.5
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD = 400V, ID = 2.8 A,
RG =4.7Ω, VGS = 10V
(see test circuit, Figure 5)
10
8
20
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
2.2
A
ISDM (2)
Source-drain Current (pulsed)
8.8
A
VSD (1)
Forward On Voltage
ISD = 2.2 A, VGS = 0
1.6
V
trr
Reverse Recovery Time
ISD = 2.8A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
380
ns
Qrr
Reverse Recovery Charge
2200
nC
IRRM
Reverse Recovery Current
11.5
A
Safe Operating Area
Thermal Impedence



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