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STD30NF06LT4 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD30NF06LT4
Description  N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK STripFET™ POWER MOSFET
PDF  10 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD30NF06LT4 Datasheet(HTML) 1 Page - STMicroelectronics

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July 2002
STD30NF06L
N-CHANNEL 60V - 0.022
Ω - 35A DPAK/IPAK
STripFET™ POWER MOSFET
(1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
s
TYPICAL RDS(on) = 0.022Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
LOGIC LEVEL GATE DRIVE
s
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
s
ADD SUFFIX “-1” FOR ORDERING IN IPAK
s
CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
“Single
Feature
Size
™” strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteris-
tics and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(q) Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD30NF06L
60 V
<0.028
Ω
35 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
60
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
60
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuous) at TC = 25°C
35
A
ID
Drain Current (continuous) at TC = 100°C
25
A
IDM (l)
Drain Current (pulsed)
140
A
PTOT
Total Dissipation at TC = 25°C
70
W
Derating Factor
0.46
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
25
V/ns
Tstg
Storage Temperature
– 55 to 175
°C
Tj
Operating Junction Temperature
DPAK
3
2
1
1
3
IPAK
INTERNAL SCHEMATIC DIAGRAM


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