STD35NF06LT4 datasheet(1/9 Pages) STMICROELECTRONICS

Part #	STD35NF06LT4

Description	N-CHANNEL 60V - 0.014ohm - 35A DPAK STripFET?줚I MOSFET

PDF	9 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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November 2003

STD35NF06L

N-CHANNEL 60V - 0.014

Ω - 35A DPAK

STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.014 Ω

s

LOW THRESHOLD DRIVE

s

GATE CHARGE MINIMIZED

s

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX “T4")

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

DC-AC CONVERTERS

s

AUTOMOTIVE SWITCHING APPLICATION

TYPE

VDSS

RDS(on)

ID

STD35NF06L

60 V

< 0.017

Ω

35 A

1

3

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 30A, VDD =30V

SALES TYPE

MARKING

PACKAGE

PACKAGING

STD35NF06LT4

D35NF06L

TO-252

TAPE & REEL

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuous) at TC = 25°C

35

A

ID

Drain Current (continuous) at TC = 100°C

24.5

A

IDM(•)

Drain Current (pulsed)

140

A

Ptot

Total Dissipation at TC = 25°C

80

W

Derating Factor

0.67

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5

V/ns

EAS (2)

Single Pulse Avalanche Energy

280

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Operating Junction Temperature

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STD35NF06LT4 Datasheet(PDF) 1 Page - STMicroelectronics

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