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STD3NC60 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD3NC60 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page  1/10 August 2002 STD3NC60 STD3NC60-1 N-CHANNEL 600V - 1.8 Ω - 3.2A DPAK / IPAK PowerMesh™II MOSFET s TYPICAL RDS(on) = 1.8Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED s ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL (SMD PACKAGE) DESCRIPTION The PowerMESH ™II is the evolution of the first generation of MESH OVERLAY ™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤3.2A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX. TYPE VDSS RDS(on) ID STD3NC60 STD3NC60-1 600V 600V <2.2 Ω <2.2 Ω 3.2A 3.2A Symbol Parameter Value Unit VDS Drain-source Voltage (VGS =0) 600 V VDGR Drain-gate Voltage (RGS =20kΩ) 600 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 3.2 A ID Drain Current (continuos) at TC = 100°C 2A IDM ( ) Drain Current (pulsed) 12.8 A PTOT Total Dissipation at TC = 25°C 50 W Derating Factor 0.4 W/°C dv/dt(1) Peak Diode Recovery voltage slope 3.5 V/ns Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C 3 2 1 1 3 DPAK IPAK (Suffix”-1”) No Suffix INTERNAL SCHEMATIC DIAGRAM |
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