24-30GHz LNA VGA

CHA2293

Ref. : DSCHA22937150 - 30 May 07

2/7

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics for Broadband Operation

Tamb = +25°C, V5=Vd= 5V

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

24

30

GHz

G

Small signal gain (1)

22

24

dB

∆G

Small signal gain flatness (1)

±1.5

dB

Is

Reverse isolation (1)

50

dB

NF

Noise figure with Vc=1.2V

3

3.5

dB

Gctrl

Gain control range versus Vc

12

15

dB

P1dB

Output power at 1dB compression with Vc=1.2V

12

dBm

VSWRin

Input VSWR (1)

4.0:1

VSWRout

Output VSWR (1)

2.0:1

Vd

DC voltage

V5= Vd

Vc

-1.5

5

[-0.7,+1.2]

+1.3

V

V

Id1

Bias current (2) with Vc=1.2V

35

mA

Id

Bias current total (3) with Vc=1.2V

160

mA

(1) These values are representative of on-wafer measurements that are made without bonding

wires at RF ports.

(2) For optimum noise figure, the bias current Id1 should be adjust to 35mA with Vg1.

(3) With Id1=35mA, adjust Vg voltage for a total drain current around 160mA.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Drain bias voltage

5.5

V

Vc

Control bias voltage

1.5

V

Id

Drain bias current

250

mA

Vg

Gate bias voltage

-2.0 to +0.4

V

Pin

Maximum peak input power overdrive (2)

+15

dBm

Ta

Operating temperature range

-40 to +85

°C

Tstg

Storage temperature range

-55 to +155

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.