CHA3513

RoHS COMPLIANT

Ref. : DSCHA3513-8144 - 23 May 08

1/10

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

6-18GHz 3 bit Digital Variable Amplifier

GaAs Monolithic Microwave IC

Description

The CHA3513 is composed by a three steps

digital attenuator followed by a three stage

travelling amplifier and a Single Pole Single

Through (SPST) switch. It is designed for

defense applications. The backside of the

chip is both RF and DC grounded. This helps

to simplify the assembly process.

The circuit is manufactured with a pHEMT

process, 0.25µm gate length, via holes

through

the

substrate,

air

bridges

and

electron beam gate lithography.

It is available in chip form.

Main Features

■ Performances: 6-18GHz

■ 20dBm saturated output power

■ 19 dB gain

■ 3 bit attenuator for 26dB range

■ DC power consumption, 300mA @ 4.5V

■ Chip size:

6.68 x 2.46 x 0.1 mm

Typical on wafer Measurements

Gain versus attenuation states

Main Characteristics

Tamb. = 25°C

Symbol

Parameter

Min

Typ

Max

Unit

Fop

Operating frequency range

6

18

GHz

G

Small signal gain @ Attenuator state 0dB

19

dB

Psat

Saturated Output power @ Attenuator state 0dB

20

dBm

ATT dyn

Attenuator range with 3bit

25

dB

ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !

RF

IN

10A

5A

10A1

B C F

G

10B

5B

10B1

A D E

H

RF

OUT

10dB

5dB

10dB

RF

IN

10A

5A

10A1

B C F

G

10B

5B

10B1

A D E

H

RF

OUT

10dB

5dB

10dB

10dB

5dB

10dB

0dB state

5dB state

10dB state