CHA6517

X-band High Power Amplifier

Ref. : DSCHA6517-8205 - 25 Jun 08

2/10

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

Electrical Characteristics

Tamb = 25°C (2), Vd=8V, Id (Quiescient) = 0.6A, Pu lsed biasing mode, each channel

Symbol

Parameter

Min

Typ

Max

Unit

F_op

Operating frequency

6

18

GHz

G_lin

Linear gain (Pin=-5dBm)

19

22

dB

RL_in

Input Return Loss

-14

-8

dB

RL_out

Output Return Loss

-8

-4

dB

Psat

Saturated output power (Pin=11dBm)

30

32

dBm

PAE_sat

Power Added Efficiency in saturation

15

%

Vd

Positive supply voltage

8

V

Id

Power supply quiescent current (1)

0.6

A

Vg

Negative supply voltage

-0.4

V

Top

Operating temperature range (2)

-40

+70

°C

(1) This parameter is fixed by gate voltage Vg

(2) The reference is the back-side of the chip

Absolute Maximum Ratings (1)

Symbol

Parameter

Values

Unit

Pin (2)

Maximum Input power

19

dBm

Vd (2)

Positive supply voltage without RF power

8.5

V

Id (2)

Positive supply quiescent current

1

A

Pd (2)

Power dissipation

13.5

W

Tj

Junction temperature

175

°C

Tstg

Storage temperature range

-55 to +125

°C

(1)

Operation of this device above anyone of these parameters may cause permanent damage.

(2)

These values are specified for Tamb = 25°C