X-band High Power Amplifier

CHA7010

Ref. DSCHA70104054 - 23 Feb 04

2/7

Specifications subject to change without notice

Electrical Characteristics

Tamb = 25°C, Vc=9V, Ic (Quiescient) = 2.4A, Pulse width=80µs , Duty cycle = 30%

Symbol

Parameter

Min

Typ

Max

Unit

F_op

Operating frequency

8.4

9.4

10.4

GHz

G_lin_1

Linear gain (8.4 to 9.4GHz)

14

16

dB

G_lin_2

Linear gain (9.4 to 10.4GHz)

16

18

dB

G_lin_T

Linear gain variation versus temperature

-0.035

dB/°C

RL_in

Input Return Loss

8

12

dB

RL_out

Output Return Loss

6

12

dB

P_sat_1

Saturated output power (8.4 to 9.8GHz)

39

40

dBm

P_sat_2

Saturated output power (9.8 to 10.4GHz)

38

39

dBm

P_sat_T

Saturated output power variation versus

temperature

-0.01

dB/°C

P_1dBc_1

Output power @ 1dBc (8.4 to 9.8GHz)

38

39

dBm

P_1dBc_2

Output power @ 1dBc (9.8 to 10.4GHz)

37

38

dBm

PAE_sat

Power Added Efficiency in saturation

30

35

%

PAE_1dBc

Power Added Efficiency @ 1dBc

32

%

Vc

Power supply voltage

9

V

Ic

Power supply quiescent current (1)

2.4

A

Vctr

Collector current control voltage (2)

5.1

V

Zctr

Vctr input port impedance (3)

350

Ohm

Top

Operating temperature range (4)

-30

+70

°C

(1) This parameter is fixed by Vctr

(2) Control voltage pulsed is recommanded.

(3) This value corresponds to the 4 ports in parallel (Pin 3, 8, 16, 21)

(4) The reference is the back-side of the chip

Absolute Maximum Ratings (1)

Tamb = 25°C

Symbol

Parameter

Values

Unit

Cmp

Compression level (2)

6

dB

Vc

Power supply voltage

10

V

Ic

Power supply quiescent current

2.8

A

Ic_sat

Power supply current in saturation

3.5

A

Vctr

Collector current control voltage

6.5

V

Tstg

Storage temperature range

-55 to +125

°C

(1)

Operation of this device above anyone of these parameters may cause permanent damage.

(2)

For higher compression the level limit can be increased by decreasing the voltage Vc using the rate

0.5 V / dBc

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