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STD4NB25 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD4NB25 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  STD4NB25 N - CHANNEL 250V - 0.95 Ω - 4A - DPAK/IPAK PowerMESH ™ MOSFET PRELIMINARY DATA ν TYPICAL RDS(on) = 0.95 Ω ν EXTREMELY HIGH dv/dt CAPABILITY ν 100% AVALANCHE TESTED ν VERY LOW INTRINSIC CAPACITANCES ν GATE CHARGE MINIMIZED ν FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS ν SWITCH MODE POWER SUPPLIES (SMPS) ν DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM February 2000 1 3 DPAK TO-252 (Suffix "T4") ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 250 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC4 A ID Drain Current (continuous) at Tc = 100 oC2.5 A IDM( •) Drain Current (pulsed) 16 A Ptot Total Dissipation at Tc = 25 oC40 W Derating Factor 0.32 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤4 Α, di/dt â 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STD4NB25 250 V < 1.1 Ω 4 A 3 2 1 IPAK TO-251 (Suffix "-1") 1/6 |
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