Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

SDR6

__ __ __

__ = Not Screened

TX = TX Level

TXV = TXV

S = S Level

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M = 1000V

SDR6K and SDR6M

6.0 AMPS

800 ─ 1000 VOLTS

90 nsec ULTRA FAST RECTIFIER

FEATURES:

•

Ultra Fast Recovery:

90 ns Max @ 25

115-120 ns Max @ 100

•

Single Chip Construction

•

PIV to 1000 Volts

•

Low Reverse Leakage Current

•

Hermetically Sealed

•

For High Efficiency Applications

•

Metallurgically Bonded

•

Replaces Larger DO-4 Rectifiers

•

TX, TXV, and S-Level Screening Available

RATING

SYMBOL

VALUE

UNIT

Peak Repetitive Reverse

Voltage

And

DC Blocking Voltage

SDR1K

SDR1M

800

1000

Volts

Rectified Forward Forward Current

6

Amp

Peak Surge Current

(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach

150

Amps

Operating & Storage Temperature

-65 to +175

°

C

Thermal Resistance, Junction to Lead, L = 3/8”

12

°

C/W

NOTES:

1/ For Ordering Information, Price, and Availability- Contact Factory.

2/ Screened to MIL-PRF-19500.

3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.

Axial Leaded

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RU0017B

DOC