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STD5NB20 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD5NB20 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 5 page  STD5NB20 N - CHANNEL 200V - 0.70 Ω - 5A DPAK PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) =0.7 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s FOR TROUGH-HOLE VERSION CONTACT SALES OFFICE DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH EFFICIENCY DC-DC CONVERTERS s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM December 1998 1 3 DPAK TO-252 (Suffix "T4") ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 200 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 o C5 A ID Drain Current (continuous) at Tc = 100 oC3 A IDM( •) Drain Current (pulsed) 20 A Ptot Total Dissipation at Tc = 25 oC45 W Derating Factor 0.36 W/ o C dv/dt(1) Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area (1) ISD ≤5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX TYPE VDSS RDS(on) ID STD5NB20 200 V < 0.8 Ω 5 A 1/5 |
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