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STD5NB30 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD5NB30 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() STD5NB30 N - CHANNEL 300V - 0.75 Ω - 5A - DPAK PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM August 1999 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Un it VDS Drain-source Voltage (VGS = 0) 300 V VDGR Drain- gate Voltage (RGS =20 k Ω) 300 V VGS G ate-source Volt age ± 30 V ID Drain Current (continuous) at Tc =25 oC5 A ID Drain Current (continuous) at Tc =100 oC3 A IDM ( •) Drain Current (pulsed) 20 A Ptot T otal Dissipat ion at Tc =25 oC55 W Derating Factor 0.44 W / o C dv/dt (1) Peak Diode Recovery voltage slope 5.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. Operating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤ 5Α, δι/δτ ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID ST D5NB30 300 V < 0.9 Ω 5A 1 3 DPAK TO-252 (Suffix ”T4”) ® 1/9 |
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