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STD8NS25 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STD8NS25
Description  N-CHANNEL 250V - 0.38ohm - 8A DPAK MESH OVERLAY™ MOSFET
PDF  6 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD8NS25 Datasheet(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
July 2001
STD8NS25
N-CHANNEL 250V - 0.38
Ω - 8A DPAK
MESH OVERLAY™ MOSFET
s
TYPICAL RDS(on) = 0.38 Ω
s
EXTREMELY HIGH dv/dt CAPABILITY
s
100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company’s proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
(•)Pulse width limited by safe operating area
TYPE
VDSS
RDS(on)
ID
STD8NS25
250 V
< 0.45
Ω
8 A
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
250
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
250
V
VGS
Gate- source Voltage
± 20
V
ID
Drain Current (continuos) at TC = 25°C
8A
ID
Drain Current (continuos) at TC = 100°C
5A
IDM (q)
Drain Current (pulsed)
32
A
PTOT
Total Dissipation at TC = 25°C
80
W
Derating Factor
0.64
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
5
V/ns
EAS (2)
Single Pulse Avalanche Energy
209
mJ
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX
(2) Starting Tj = 25°C, IAR = 50A, VDD=20 V
INTERNAL SCHEMATIC DIAGRAM
DPAK
1
3


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