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STE70NM50 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STE70NM50
Description  N-CHANNEL 500V - 0.045Ω - 70A ISOTOP Zener-Protected MDmesh™ Power MOSFET
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE70NM50 Datasheet(HTML) 3 Page - STMicroelectronics

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STE70NM50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 250V, ID = 30A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
51
ns
tr
Rise Time
58
ns
Qg
Total Gate Charge
VDD = 400V, ID = 60A,
VGS = 10V
190
266
nC
Qgs
Gate-Source Charge
53
nC
Qgd
Gate-Drain Charge
97
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
tr(Voff)
Off-voltage Rise Time
VDD = 400V, ID = 60A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
51
ns
tf
Fall Time
46
ns
tc
Cross-over Time
108
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
60
A
ISDM (2)
Source-drain Current (pulsed)
240
A
VSD (1)
Forward On Voltage
ISD = 60A, VGS = 0
1.5
V
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60A, di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
(see test circuit, Figure 5)
532
9.9
37
ns
µC
A
trr
Qrr
Irrm
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 60A, di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
(see test circuit, Figure 5)
636
13.4
42
ns
µC
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVGSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain)
30
V



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