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STGD3NB60SD Datasheet(PDF) 2 Page - STMicroelectronics

Part # STGD3NB60SD
Description  N-CHANNEL 3A - 600V DPAK Power MESH IGBT
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD3NB60SD Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
3.125
100
1.5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter
Breakdown Voltage
IC = 250
µA
VGE = 0
600
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating
Tj =
25
oC
VCE = Max Rating
Tj = 125
o C
10
100
µA
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE =
± 20 V
VCE = 0
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold
Voltage
VCE = VGE
IC = 250
µA
2.5
5
V
VCE(SAT)
Collector-Emitter
Saturation Voltage
VGE = 15 V
IC = 1.5 A
VGE = 15 V
IC = 3 A
VGE = 15 V
IC = 3 A
Tj = 125
o C
1
1.2
1.1
1.5
V
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
IC = 3 A
1.7
2.5
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25 V
f = 1 MHz
VGE = 0
255
30
5.6
330
40
7
pF
pF
pF
QG
QGE
QGC
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480 V
IC = 3 A
VGE = 15 V
18
5.4
5.5
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V
RG=1k
Ω
Tj = 150
oC
12
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
VCC = 480 V
IC = 3 A
VGE= 15 V
RG = 1k
Ω
125
150
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching
Losses
VCC = 480 V
IC = 3 A
RG = 1k
Ω
VGE = 15 V
Tj = 125
oC
50
1100
A/
µs
µJ
STGD3NB60SD
2/8



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