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STGD7NB60H-1 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGD7NB60H-1
Description  N-CHANNEL 7A - 600V IPAK PowerMESH IGBT
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGD7NB60H-1 Datasheet(HTML) 1 Page - STMicroelectronics

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STGD7NB60H-1
N-CHANNEL 7A - 600V IPAK
PowerMESH
™ IGBT
s
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
s
LOW ON-VOLTAGE DROP (Vcesat)
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
OFF LOSSES INCLUDE TAIL CURRENT
s
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX”-1”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
™
IGBTs,
with
outstanding
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequency applications (<120kHz).
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS AND PFC IN BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
®
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
Un it
VCES
Collector-Emitter Volt age (VGS = 0)
600
V
VECR
Emitter-Collector Volt age
20
V
VGE
G ate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at Tc =25
oC14
A
IC
Collector Current (continuous) at Tc = 100
oC7
A
ICM(
•)
Collector Current (pulsed)
56
A
Ptot
T otal Dissipation at Tc =25
oC55
W
Derating Fact or
0. 44
W /
o C
Tstg
Storage T emperature
-65 t o 150
o C
Tj
Max. Operating Junction Temperat ure
150
o C
(
•) Pulse width limited by safe operating area
TYPE
VCES
VCE(sat)
IC
STGD7NB60H-1
600 V
< 2.8 V
7 A
June 1999
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1/8


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