STGP10NB37LZ datasheet(2/9 Pages) STMICROELECTRONICS

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STGP10NB37LZ

2/9

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

Rthj-case

Thermal Resistance Junction-case Max

1.2

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.2

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BV(CES)

Clamped Voltage

IC = 2 mA, VGE = 0,

Tj= - 40°C to 150°C

375

400

425

BV(ECR)

Emitter Collector Break-down

Voltage

IEC = 75 mA, VGE = 0,

Tj= - 40°C to 150°C

BVGE

Gate Emitter Break-down

Voltage

IG = ± 2 mA

Tj= - 40°C to 150°C

ICES

Collector cut-off Current

(VGE = 0)

VCE = 15 V, VGE =0 ,Tj =150 °C

µA

VCE =200 V, VGE=0 ,TC =150°C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 10V , VCE = 0

± 700

µA

RGE

Gate Emitter Resistance

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250µA,

Tj= - 40°C to 150°C

0.6

2.4

VCE(SAT)

Collector-Emitter Saturation

Voltage

VGE =4.5V, IC = 10 A, Tj= 25°C

1.2

1.8

VGE =4.5V, IC = 10 A, Tc= -40°C

1.3

Collector Current

VGE = 4.5V, VCE = 9 V

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE = 15 V , IC =20 A

Cies

Input Capacitance

VCE = 25V, f = 1 MHz, VGE = 0

1250

Coes

Output Capacitance

103

Cres

Reverse Transfer

Capacitance

Gate Charge

VCE = 320V, IC = 10 A,

VGE = 5V

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