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STGP10NB60S Datasheet(PDF) 2 Page - STMicroelectronics

Part # STGP10NB60S
Description  N-CHANNEL 10A - 600V TO-220 PowerMESH IGBT
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP10NB60S Datasheet(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
1.56
62. 5
0.2
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitt er
Breakdown Voltage
IC =250
µAVGE = 0
600
V
VBR(ECR)
Emitter-Collect or
Breakdown Voltage
IC = 1 mA
VGE =0
20
V
ICES
Collector cut-of f
(VGE =0)
VCE =Max Rating
Tj =25
oC
VCE =Max Rating
Tj =125
oC
10
100
µA
µA
IGES
Gat e-Emitter Leakage
Current (VCE =0)
VGE =
± 20 V
VCE =0
± 100
nA
ON (
∗)
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
VGE(th)
Gat e Threshold
Voltage
VCE =VGE
IC = 250
µA2.5
5
V
VCE(SAT )
Collector-Emitt er
Sat uration Voltage
VGE =15 V
IC =5 A
VGE =15 V
IC =10 A
VGE =15 V
IC =10 A
Tj = 125
oC
1.15
1.35
1.25
1. 7
V
V
V
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
IC =10 A
5
S
Cies
Coes
Cres
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VCE = 25V
f = 1MHz
VGE = 0
610
65
12
780
85
15
pF
pF
pF
QG
Gat e Charge
VCE = 400 V
IC =10 A
VGE = 15 V
33
nC
ICL
Lat ching Current
Vclamp =480 V
RG=1k
Ω
Tj = 150
oC
20
A
SWITCHING ON
Symbo l
Parameter
Test Con ditions
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
VCC = 480 V
IC =10 A
VGE=15 V
RG =1 K
Ω
0.7
0.46
µs
µs
(di/dt)on
Eon
Turn-on Current Slope
Turn-on
Switching Losses
VCC =480 V
I C =10 A
RG =1 K
Ω
VGE =15 V
Tj =125
oC
8
0.6
A/
µs
mJ
STGP10NB60S
2/8



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