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STGP12NB60HD Datasheet(PDF) 1 Page - STMicroelectronics

Part # STGP12NB60HD
Description  N-CHANNEL 12A - 600V TO-220 PowerMESH™ IGBT
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP12NB60HD Datasheet(HTML) 1 Page - STMicroelectronics

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July 2003
STGP12NB60HD
N-CHANNEL 12A - 600V TO-220
PowerMESH™ IGBT
s
HIGH INPUT IMPEDANCE
s
LOW ON-VOLTAGE DROP (Vcesat)
s
OFF LOSSES INCLUDE TAIL CURRENT
s
LOW GATE CHARGE
s
HIGH CURRENT CAPABILITY
s
VERY HIGH FREQUENCY OPERATION
s
CO-PACKAGED WITH TURBOSWITCHT
s
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
s
UPS
ABSOLUTE MAXIMUM RATINGS
( ) Pulsewidth limitedby safeoperating area
TYPE
VCES
VCE(sat)
IC
STGP12NB60HD
600 V
< 2.8 V12 A
Symbol
Parameter
Value
Unit
VCES
Collector-Emitter Voltage (VGS =0)
600
V
VECR
Emitter-Collector Voltage
20
V
VGE
Gate-Emitter Voltage
± 20
V
IC
Collector Current (continuous) at TC =25°C
24
A
IC
Collector Current (continuous) at TC =100°C
12
A
ICM ( )
Collector Current (pulsed)
96
A
PTOT
Total Dissipation at TC = 25°C
100
W
Derating Factor
0.8
W/°C
Tstg
Storage Temperature
–65 to 150
°C
Tj
Max. Operating Junction Temperature
150
°C
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM


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