STGP20NB60K datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

STGP20NB60K

2/6

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25

°C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

SWITCHING ON

Rthj-case

Thermal Resistance Junction-case Max

1.0

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Rthc-h

Thermal Resistance Case-heatsink Typ

0.5

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collectro-Emitter Breakdown

Voltage

IC = 250 µA, VGE =0

600

ICES

Collector cut-off

(VGE =0)

VCE = Max Rating, TC =25 °C

µA

VCE = Max Rating, TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE = ±20V , VCE =0

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250µA

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC =20 A

2.3

2.8

VGE = 15V, IC = 20 A, Tj =125°C

1.9

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE =25 V , IC =20 A

Cies

Input Capacitance

VCE = 25V, f = 1 MHz, VGE =0

1300

Coes

Output Capacitance

200

Cres

Reverse Transfer

Capacitance

Total Gate Charge

VCE = 480V, IC =20 A,

VGE = 15V

Qge

Gate-Emitter Charge

T.B.D.

Qgc

Gate-Collector Charge

T.B.D.

twsc

Short Circuit Withstand Time

Vce = 0.5 BVces , VGE =15 V,

Tj = 125

°C, RG =10 Ω

µs

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VCC = 480 V, IC =20 A

RG =10Ω ,VGE =15 V

Rise Time

(di/dt)on

Turn-on Current Slope

VCC= 480 V, IC =20 A RG=10Ω

VGE = 15 V,Tj = 125°C

350

µs

Eon

Turn-on Switching Losses

300

µJ

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