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STGP7NB120SD Datasheet(PDF) 2 Page - STMicroelectronics

Part # STGP7NB120SD
Description  N-CHANNEL 7A - 1200V - TO-220 PowerMESH™ IGBT
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP7NB120SD Datasheet(HTML) 2 Page - STMicroelectronics

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STGP7NB120SD
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
Rthj-case
Thermal Resistance Junction-case Max
1.38
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-h
Thermal Resistance Case-heatsink Typ
0.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
1200
V
VBR(ECR)
Emitter-Collector Breakdown
Voltage
IC = 10mA, VGE = 0
20
V
ICES
Collector cut-off
(VGE =0)
VCE = Max Rating, TC =25 °C
50
µA
VCE = Max Rating, TC = 125 °C
250
µA
IGES
Gate-Emitter Leakage
Current (VCE =0)
VGE =±20V,VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE =VGE,IC = 250µA
35
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE =15V, IC = 3.5 A
VGE =15V, IC =7 A
VGE =15V, IC =10A
1.7
1.6
2.1
V
V
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE =25V , IC =7 A
2.5
4.5
S
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VCE = 25V,f= 1MHz,VGE = 0
430
40
7
pF
pF
pF
Qg
Gate Charge
VCE = 960V, IC =7A,
VGE =15V
29
nC
ICL
Latching Current
Vclamp = 960V , Tj = 150°C
RG =1KΩ
10
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC =960 V, IC =7 A
RG =1KΩ ,VGE =15V
570
270
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 960 V, IC = 7 A, RG=1KΩ
VGE = 15 V, Tj = 125°C
800
3.2
A/µs
mJ



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