HC6856 datasheet(9/12 Pages) HONEYWELL

9 / 12 page

HC6856

TESTER AC TIMING CHARACTERISTICS

QUALITY AND RADIATION HARDNESS

ASSURANCE

Honeywell maintains a high level of product integrity through

process control, utilizing statistical process control, a com-

plete “Total Quality Assurance System,” a computer data

base process performance tracking system, and a radia-

tion hardness assurance strategy.

The radiation hardness assurance strategy starts with a

technology that is resistant to the effects of radiation.

Radiation hardness is assured on every wafer by irradiating

test structures as well as SRAM product, and then monitor-

ing key parameters which are sensitive to ionizing radia-

tion. Conventional MIL-STD-883 TM 5005 Group E testing,

which includes total dose exposure with Cobalt 60, may

also be performed as required. This Total Quality approach

ensures our customers of a reliable product by engineering

in reliability, starting with process development and con-

tinuing through product qualification and screening.

SCREENING LEVELS

Honeywell offers several levels of device screening to meet

your system needs. “Engineering Devices” are available

with limited performance and screening for breadboarding

and/or evaluation testing. Hi-Rel Level B and S devices

undergo additional screening per the requirements of MIL-

STD-883. As a QML supplier, Honeywell also offers QML

Class Q and V devices per MIL-PRF-38535 and are avail-

able per the applicable Standard Military Drawing (SMD).

QML devices offer ease of procurement by eliminating the

need to create detailed specifications and offer benefits of

improved quality and cost savings through standardization.

RELIABILITY

Honeywell understands the stringent reliability require-

ments that space and defense systems require and has

extensive experience in reliability testing on programs of

this nature. This experience is derived from comprehen-

sive testing of VLSI processes. Reliability attributes of the

RICMOS™ process were characterized by testing specially

designed irradiated and non-irradiated test structures from

which specific failure mechanisms were evaluated. These

specific mechanisms included, but were not limited to, hot

carriers, electromigration and time dependent dielectric

breakdown. This data was then used to make changes to

the design models and process to ensure more reliable

products.

In addition, the reliability of the RICMOS™ process and

product in a military environment was monitored by testing

irradiated and non-irradiated circuits in accelerated dy-

namic life test conditions. Packages are qualified for prod-

uct use after undergoing Groups B & D testing as outlined

in MIL-STD-883, TM 5005, Class S. The product is quali-

fied by following a screening and testing flow to meet the

customer’s requirements. Quality conformance testing is

performed as an option on all production lots to ensure the

ongoing reliability of the product.

High Z = 2.9V

3 V

0 V

1.5 V

VDD-0.5 V

0.5 V

VDD/2

1.5 V

VDD-0.4V

0.4 V

High Z

3.4 V

2.4 V

High Z

VDD/2

0.4 V

High Z

3.4 V

2.4 V

High Z

TTL I/O Configuration

Input

Levels*

Output

Sense

Levels

CMOS I/O Configuration

High Z = 2.9V

* Input rise and fall times <1 ns/V

VDD-0.4V

HC6856 Datasheet(PDF) 9 Page - Honeywell Solid State Electronics Center

HC6856 Datasheet(HTML) 9 Page - Honeywell Solid State Electronics Center

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL