STGW50NB60M datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

STGW50NB60M

2/9

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

SWITCHING ON

Rthj-case

Thermal Resistance Junction-case Max

0.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

°C/W

Rthc-h

Thermal Resistance Case-heatsink Typ

0.1

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off

(VGE =0)

VCE = Max Rating, TC =25 °C

VCE = Max Rating, TC = 125 °C

100

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =± 20 V,VCE = 0

± 100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250 µA

345

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE =15V, IC =30A@25°C

VGE =15V, IC =30A@100°C

VGE =15V, IC =50A@25°C

VGE =15V, IC =50A@100°C

1.3

1.2

1.5

1.35

1.9

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE =15V , IC =18 A

Cies

Coes

Cres

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VCE =25V,f= 1MHz, VGE =0

4500

400

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE = 480 V, IC =50 A,

VGE =15 V

231

ICL

Latching Current

Vclamp = 480 V , Tj = 125°C

RG =10 Ω

300

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VCC =480 V, IC =50 A

RG =10Ω ,VGE =15V

(di/dt)on

Eon

Turn-on Current Slope

Turn-on Switching Losses

VCC= 480 V, IC =50 A

RG=10 Ω , VGE =15 V

Tj = 125°C

1600

800

A/µs

µJ

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