STGY50NB60HD datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-case

Rthj-amb

Rthc-h

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-heat sink

Typ

0.5

0.1

oC/W

ELECTRICAL CHARACTERISTICS (Tj =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitt er

Breakdown Voltage

IC =250

µAVGE = 0

600

ICES

Collector cut-of f

(VGE =0)

VCE =Max Rating

Tj =25

VCE =Max Rating

Tj =125

100

1000

µA

IGES

Gat e-Emitter Leakage

Current (VCE =0)

VGE =

± 20 V

VCE =0

± 100

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGE(th)

Gat e Threshold

Voltage

VCE =VGE

IC = 250

µA3

VCE(SAT )

Collector-Emitt er

Sat uration Voltage

VGE =15 V

IC =50 A

VGE =15 V

IC =50 A

Tj = 125

2.3

1.9

2. 8

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward

Transconductance

VCE =25 V

IC =50 A

Cies

Coes

Cres

Input Capacitance

Out put Capacitance

Reverse Transfer

Capacitance

VCE = 25V

f = 1MHz

VGE = 0

4500

450

QGE

QGC

Tot al G ate Charge

Gat e-Emitter Charge

Gat e-Collector Charge

VCE = 480 V

IC =50 A

VGE = 15 V

260

ICL

Lat ching Current

Vclamp =480 V

RG=10

Ω

Tj = 150

200

SWITCHING ON

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Delay Time

Rise Time

VCC = 480 V

IC =50 A

VGE=15 V

RG =10

Ω

(di/dt)on

Eon(r)

Turn-on Current Slope

Turn-on

Switching Losses

VCC =480 V

I C =50 A

RG =10

Ω

VGE =15 V

Tj =125

350

950

µs

µJ

STGY50NB60HD

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