STTH806DTI datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH806DTI

2/7

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.7 x IF(AV) + 0.087 IF

(RMS)

Table 4.

Thermal parameter

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case thermal resistance

2.6

°C/W

Table 5.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

100

(2)

Forward voltage drop

Tj = 25° C

IF = 8 A

3.6

Tj = 150° C

1.95

2.4

1. Pulse test: tp = 100 ms,

δ < 2%

Pulse test: tp = 380 µs,

δ < 2%

Table 6.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min Typ Max Unit

trr

Reverse recovery time

Tj = 25° C

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

IF = 1 A, dIF/dt = - 50 A/µs

VR = 30 V

IRM

Reverse recovery current

Tj = 125° C

IF = 8 A, VR = 400,

VdIF/dt = - 200 A/µs

45.5

Reverse recovery softness factor

0.4

Qrr

Reverse recovery charges

Table 7.

Turn-on switching characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

tfr

Forward recovery time

Tj = 25° C

IF = 8 A, dIF/dt = 100 A/µs

VFR = 1.1 x VF max

200

VFP

Forward recovery voltage

Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs

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