STTH3R04RL datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

Characteristics

STTH3R04

4/10

Figure 5.

Relative variation of thermal

impedance junction to ambient

versus pulse duration, SMB (epoxy

FR4, copper thickness = 35 µm)

Figure 6.

Relative variation of thermal

impedance junction to ambient

versus pulse duration, SMC

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

SMB

SCu=1cm²

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

SMC

SCu=1cm²

tP(s)

Figure 7.

Junction capacitance versus

reverse voltage applied

(typical values)

Figure 8.

Reverse recovery charges versus

dIF/dt (typical values)

100

1000

C(pF)

F=1MHz

OSC=30mVRMS

j=25°C

VR(V)

100

1000

RR(nC)

F= 3 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

Figure 9.

Reverse recovery time versus

dIF/dt (typical values)

Figure 10.

Peak reverse recovery current

versus dIF/dt (typical values)

100

1000

RR(ns)

F= 3 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

100

1000

RM(A)

F= 3 A

R=320 V

j=125 °C

j=25 °C

dIF/dt(A/µs)

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