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STTH60L04W Datasheet(PDF) 4 Page - STMicroelectronics |
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STTH60L04W Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 7 page ![]() Characteristics STTH60L04W 4/7 Figure 7. Reverse recovery softness factor versus dIF/dt (typical values, per diode) Figure 8. Relative variations of dynamic parameters versus junction temperature 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 50 100 150 200 250 300 350 400 450 500 SFACTOR I F < 2 x IF(AV) V R=200V T j=125°C dI F /dt(A/µs) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 25 50 75 100 125 I RM &tRR S FACTOR I F=IF(AV) V R=200V Reference: T j=125°C Q RR T j (°C) Figure 9. Transient peak forward voltage versus dIF/dt (typical values, per diode) Figure 10. Forward recovery time versus dIF/dt (typical values, per diode) Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) 0 1 2 3 4 5 6 7 8 0 50 100 150 200 250 300 350 400 450 500 VFP(V) I F=IF(AV) T j=125°C dI F /dt(A/µs) 0 100 200 300 400 500 600 700 800 900 1000 0 50 100 150 200 250 300 350 400 450 500 t (ns) I F=IF(AV) V FR=1.1 x VF max. T j=125°C dIF/dt(A/µs) fr 100 1000 1 10 100 1000 C(pF) F=1MHz V OSC=30mVRMS T j=25°C V R (V) |
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