STN3NF06 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

STN3NF06

2/8

Note: 1. THERMAL DATA

(*) When Mounted on FR-4 board with 1 inch2 pad, 2 oz of Cu and t

[ 10 sec

(**) When Mounted on minimum recommended footprint

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (1)

DYNAMIC

Rthj-pcb

Thermal Resistance Junction-PCB (*)

Thermal Resistance Junction-PCB (**)

Maximum Lead Temperature For Soldering Purpose

(for 10 sec. 1.6 mm from case)

Max

Typ

100

260

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1.5 A

0.07

0.10

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS = 15 V

ID = 1.5A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

315

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