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STP10NB20 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP10NB20 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 9 page  STP10NB20 STP10NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.3 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM November 1997 TO-220 TO-220FP 1 2 3 1 2 3 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t ST P10NB20 STP10NB20FP VDS Drain-source Voltage (VGS =0) 200 V VDGR Drain- gate Volt age (RGS =20 k Ω) 200 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC10 6 A ID Drain Current (continuous) at Tc =100 oC6 4 A IDM( •) Drain Current (pulsed) 40 40 A Ptot Tot al Dissipation at Tc =25 oC85 30 W Derating Factor 0.68 0.24 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 5.5 V/ ns VISO Insulat ion W it hst and Voltage (DC) 2000 V Tstg Storage T emperat ure -65 t o 150 oC Tj Max. O perating Junction T emperat ure 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤ 10A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STP10NB20 STP10NB20F P 200 V 200 V <0.40 Ω <0.40 Ω 10 A 6A 1/9 |
Similar Part No. - STP10NB20 |
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Similar Description - STP10NB20 |
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